N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STMicroelectronics STW77N65M5

RS Stock No.: 761-0635PBrand: STMicroelectronicsManufacturers Part No.: STW77N65M5
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M5

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

185 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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AED 71.65

Each (Supplied in a Tube) (ex VAT)

AED 75.23

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STMicroelectronics STW77N65M5
Select packaging type

AED 71.65

Each (Supplied in a Tube) (ex VAT)

AED 75.23

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STMicroelectronics STW77N65M5
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 4AED 71.65
5 - 9AED 68.05
10 - 24AED 61.25
25 - 49AED 55.20
50+AED 52.40

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M5

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Typical Gate Charge @ Vgs

185 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more