Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
92A
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
23mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
230nC
Maximum Power Dissipation Pd
463W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
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Stock information temporarily unavailable.
AED 2,556.76
AED 85.226 Each (In a Tube of 30) (ex VAT)
AED 2,684.60
AED 89.487 Each (In a Tube of 30) (inc. VAT)
30
AED 2,556.76
AED 85.226 Each (In a Tube of 30) (ex VAT)
AED 2,684.60
AED 89.487 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
92A
Series
STW
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
23mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
230nC
Maximum Power Dissipation Pd
463W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
