N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

RS Stock No.: 171-3620Brand: Taiwan SemiconductorManufacturers Part No.: TSM3N80CH C5G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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AED 10.45

Each (On a Reel of 1875) (ex VAT)

AED 10.972

Each (On a Reel of 1875) (inc VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

AED 10.45

Each (On a Reel of 1875) (ex VAT)

AED 10.972

Each (On a Reel of 1875) (inc VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V