Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.3W
Maximum Gate Source Voltage Vgs
10 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
2nC
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
2 mm
Height
0.8mm
Length
2mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
AED 3,150.00
AED 1.05 Each (On a Reel of 3000) (ex VAT)
AED 3,307.50
AED 1.102 Each (On a Reel of 3000) (inc. VAT)
3000
AED 3,150.00
AED 1.05 Each (On a Reel of 3000) (ex VAT)
AED 3,307.50
AED 1.102 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.3W
Maximum Gate Source Voltage Vgs
10 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
2nC
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
2 mm
Height
0.8mm
Length
2mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details


