Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
25V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.1W
Maximum Gate Source Voltage Vgs
10 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
5.1 mm
Height
1.05mm
Length
6.1mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
AED 12,840.00
AED 5.136 Each (On a Reel of 2500) (ex VAT)
AED 13,482.00
AED 5.393 Each (On a Reel of 2500) (inc. VAT)
2500
AED 12,840.00
AED 5.136 Each (On a Reel of 2500) (ex VAT)
AED 13,482.00
AED 5.393 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
25V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.1W
Maximum Gate Source Voltage Vgs
10 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
5.1 mm
Height
1.05mm
Length
6.1mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details


