Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
AED 45.68
AED 9.135 Each (In a Pack of 5) (ex VAT)
AED 47.96
AED 9.592 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 45.68
AED 9.135 Each (In a Pack of 5) (ex VAT)
AED 47.96
AED 9.592 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 9.135 | AED 45.68 |
| 50 - 95 | AED 7.298 | AED 36.49 |
| 100+ | AED 5.88 | AED 29.40 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details


