Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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AED 4.55
Each (In a Pack of 10) (ex VAT)
AED 4.778
Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 4.55
Each (In a Pack of 10) (ex VAT)
AED 4.778
Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 4.55 | AED 45.50 |
50 - 90 | AED 3.50 | AED 35.00 |
100 - 240 | AED 2.75 | AED 27.50 |
250 - 490 | AED 2.65 | AED 26.50 |
500+ | AED 2.55 | AED 25.50 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details