N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

RS Stock No.: 827-4836Brand: Texas InstrumentsManufacturers Part No.: CSD17308Q3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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AED 4.55

Each (In a Pack of 10) (ex VAT)

AED 4.778

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Select packaging type

AED 4.55

Each (In a Pack of 10) (ex VAT)

AED 4.778

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
10 - 40AED 4.55AED 45.50
50 - 90AED 3.50AED 35.00
100 - 240AED 2.75AED 27.50
250 - 490AED 2.65AED 26.50
500+AED 2.55AED 25.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more