Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B

RS Stock No.: 827-4870Brand: Texas InstrumentsManufacturers Part No.: CSD18502Q5B
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

AED 56.18

AED 11.235 Each (In a Pack of 5) (ex VAT)

AED 58.99

AED 11.797 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Select packaging type

AED 56.18

AED 11.235 Each (In a Pack of 5) (ex VAT)

AED 58.99

AED 11.797 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 20AED 11.235AED 56.18
25 - 45AED 10.658AED 53.29
50 - 120AED 9.608AED 48.04
125 - 245AED 8.662AED 43.31
250+AED 8.19AED 40.95

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more