Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
AED 52.50
AED 10.50 Each (In a Pack of 5) (ex VAT)
AED 55.12
AED 11.025 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 52.50
AED 10.50 Each (In a Pack of 5) (ex VAT)
AED 55.12
AED 11.025 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 10.50 | AED 52.50 |
| 25 - 45 | AED 9.975 | AED 49.88 |
| 50 - 120 | AED 8.978 | AED 44.89 |
| 125 - 245 | AED 8.032 | AED 40.16 |
| 250+ | AED 7.665 | AED 38.32 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


