Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
0.8V
Maximum Power Dissipation Pd
3.2W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
150°C
Width
5 mm
Height
1.1mm
Standards/Approvals
No
Length
5.8mm
Automotive Standard
No
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
AED 9,362.50
AED 3.745 Each (On a Reel of 2500) (ex VAT)
AED 9,830.62
AED 3.932 Each (On a Reel of 2500) (inc. VAT)
2500
AED 9,362.50
AED 3.745 Each (On a Reel of 2500) (ex VAT)
AED 9,830.62
AED 3.932 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
0.8V
Maximum Power Dissipation Pd
3.2W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
150°C
Width
5 mm
Height
1.1mm
Standards/Approvals
No
Length
5.8mm
Automotive Standard
No
Country of Origin
Malaysia
Product details


