Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
3.2W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
5 mm
Height
1.1mm
Length
5.8mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
AED 24.41
AED 4.882 Each (In a Pack of 5) (ex VAT)
AED 25.63
AED 5.126 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 24.41
AED 4.882 Each (In a Pack of 5) (ex VAT)
AED 25.63
AED 5.126 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Technical Document
Specifications
Brand
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
SON
Series
NexFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
3.2W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
0.8V
Maximum Operating Temperature
150°C
Width
5 mm
Height
1.1mm
Length
5.8mm
Standards/Approvals
No
Automotive Standard
No
Product details


