Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Width
4.7mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
Malaysia
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
AED 225.75
AED 4.515 Each (In a Tube of 50) (ex VAT)
AED 237.04
AED 4.741 Each (In a Tube of 50) (inc. VAT)
50
AED 225.75
AED 4.515 Each (In a Tube of 50) (ex VAT)
AED 237.04
AED 4.741 Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Width
4.7mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
Malaysia
Product details