Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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AED 5.15
Each (In a Pack of 5) (ex VAT)
AED 5.408
Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 5.15
Each (In a Pack of 5) (ex VAT)
AED 5.408
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 5.15 | AED 25.75 |
25 - 95 | AED 4.55 | AED 22.75 |
100 - 245 | AED 3.95 | AED 19.75 |
250 - 495 | AED 3.75 | AED 18.75 |
500+ | AED 3.60 | AED 18.00 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details