Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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AED 250.00
AED 5.00 Each (In a Tube of 50) (ex VAT)
AED 262.50
AED 5.25 Each (In a Tube of 50) (inc. VAT)
50
AED 250.00
AED 5.00 Each (In a Tube of 50) (ex VAT)
AED 262.50
AED 5.25 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 5.00 | AED 250.00 |
100 - 200 | AED 4.50 | AED 225.00 |
250 - 450 | AED 4.35 | AED 217.50 |
500 - 700 | AED 4.15 | AED 207.50 |
750+ | AED 3.95 | AED 197.50 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
Philippines
Product details