Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
AED 28.46
AED 28.46 Each (ex VAT)
AED 29.88
AED 29.88 Each (inc. VAT)
Standard
1
AED 28.46
AED 28.46 Each (ex VAT)
AED 29.88
AED 29.88 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 4 | AED 28.46 |
5 - 9 | AED 27.88 |
10+ | AED 26.93 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
272 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 0 V
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details