N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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AED 6.00
Each (In a Pack of 5) (ex VAT)
AED 6.30
Each (In a Pack of 5) (inc VAT)
5
AED 6.00
Each (In a Pack of 5) (ex VAT)
AED 6.30
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | AED 6.00 | AED 30.00 |
15 - 45 | AED 5.35 | AED 26.75 |
50 - 245 | AED 4.45 | AED 22.25 |
250 - 495 | AED 3.60 | AED 18.00 |
500+ | AED 3.25 | AED 16.25 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details