Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
AED 12.76
AED 12.76 Each (ex VAT)
AED 13.40
AED 13.40 Each (inc. VAT)
Standard
1
AED 12.76
AED 12.76 Each (ex VAT)
AED 13.40
AED 13.40 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 24 | AED 12.76 |
| 25 - 99 | AED 9.66 |
| 100 - 249 | AED 9.56 |
| 250 - 499 | AED 9.45 |
| 500+ | AED 9.40 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details


