Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 5.2 x 26mm
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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Please check again later.
AED 9.35
Each (Supplied in a Bag) (ex VAT)
AED 9.82
Each (Supplied in a Bag) (inc. VAT)
Production pack (Bag)
25
AED 9.35
Each (Supplied in a Bag) (ex VAT)
AED 9.82
Each (Supplied in a Bag) (inc. VAT)
Production pack (Bag)
25
Buy in bulk
quantity | Unit price |
---|---|
25 - 99 | AED 9.35 |
100 - 249 | AED 9.20 |
250 - 499 | AED 9.15 |
500+ | AED 9.05 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 5.2 x 26mm
Product details