Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
AED 10.50
AED 0.42 Each (In a Pack of 25) (ex VAT)
AED 11.02
AED 0.441 Each (In a Pack of 25) (inc. VAT)
25
AED 10.50
AED 0.42 Each (In a Pack of 25) (ex VAT)
AED 11.02
AED 0.441 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | AED 0.42 | AED 10.50 |
| 250 - 475 | AED 0.368 | AED 9.19 |
| 500 - 975 | AED 0.368 | AED 9.19 |
| 1000 - 1975 | AED 0.368 | AED 9.19 |
| 2000+ | AED 0.368 | AED 9.19 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details


