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P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)

RS Stock No.: 415-174Brand: ToshibaManufacturers Part No.: 2SJ668(TE16L,NQ)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Package Type

PW Mold

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Width

5.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.5mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

Product details

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

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AED 3.00

Each (In a Pack of 10) (ex VAT)

AED 3.15

Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Select packaging type

AED 3.00

Each (In a Pack of 10) (ex VAT)

AED 3.15

Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 40AED 3.00AED 30.00
50 - 190AED 2.35AED 23.50
200 - 490AED 2.05AED 20.50
500 - 990AED 1.95AED 19.50
1000+AED 1.90AED 19.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Package Type

PW Mold

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Width

5.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.5mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

Product details

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more