Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
AED 39.64
AED 7.928 Each (In a Pack of 5) (ex VAT)
AED 41.62
AED 8.324 Each (In a Pack of 5) (inc. VAT)
5
AED 39.64
AED 7.928 Each (In a Pack of 5) (ex VAT)
AED 41.62
AED 8.324 Each (In a Pack of 5) (inc. VAT)
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 7.928 | AED 39.64 |
| 25 - 45 | AED 7.77 | AED 38.85 |
| 50 - 95 | AED 7.665 | AED 38.32 |
| 100 - 245 | AED 7.455 | AED 37.28 |
| 250+ | AED 7.35 | AED 36.75 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details


