Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
0.8mm
Length
1.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.7mm
Country of Origin
Japan
Product details
MOSFET N-Channel, SSM3K Series, Toshiba
MOSFET Transistors, Toshiba
AED 36.75
AED 0.368 Each (In a Pack of 100) (ex VAT)
AED 38.59
AED 0.386 Each (In a Pack of 100) (inc. VAT)
100
AED 36.75
AED 0.368 Each (In a Pack of 100) (ex VAT)
AED 38.59
AED 0.386 Each (In a Pack of 100) (inc. VAT)
100
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 100 - 200 | AED 0.368 | AED 36.75 |
| 300+ | AED 0.315 | AED 31.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
0.8mm
Length
1.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.7mm
Country of Origin
Japan
Product details


