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Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T

RS Stock No.: 236-3582Brand: ToshibaManufacturers Part No.: SSM6N7002KFU,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

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AED 0.15

Each (In a Pack of 200) (ex VAT)

AED 0.158

Each (In a Pack of 200) (inc. VAT)

Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 200.

Production -

Available in multiples of 200.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

200

Available in multiples of 200
200AED 30.00
400AED 60.00
600AED 90.00
800AED 120.00
1000AED 150.00
1200AED 180.00
1400AED 210.00
1600AED 240.00
1800AED 270.00
2000AED 300.00
2200AED 330.00
2400AED 360.00
2600AED 390.00
2800AED 420.00
3000AED 450.00

AED 0.15

Each (In a Pack of 200) (ex VAT)

AED 0.158

Each (In a Pack of 200) (inc. VAT)

Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 200.

Production -

Available in multiples of 200.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

200

Available in multiples of 200
200AED 30.00
400AED 60.00
600AED 90.00
800AED 120.00
1000AED 150.00
1200AED 180.00
1400AED 210.00
1600AED 240.00
1800AED 270.00
2000AED 300.00
2200AED 330.00
2400AED 360.00
2600AED 390.00
2800AED 420.00
3000AED 450.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more