Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T

RS Stock No.: 236-3581Brand: ToshibaManufacturers Part No.: SSM6N7002KFU,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 630.00

AED 0.21 Each (On a Reel of 3000) (ex VAT)

AED 661.50

AED 0.22 Each (On a Reel of 3000) (inc. VAT)

Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T

3000

Available in multiples of 3000
3000AED 630.00
6000AED 1,260.00
9000AED 1,890.00
12000AED 2,520.00
15000AED 3,150.00
18000AED 3,780.00
21000AED 4,410.00
24000AED 5,040.00
27000AED 5,670.00
30000AED 6,300.00
33000AED 6,930.00
36000AED 7,560.00
39000AED 8,190.00
42000AED 8,820.00
45000AED 9,450.00

AED 630.00

AED 0.21 Each (On a Reel of 3000) (ex VAT)

AED 661.50

AED 0.22 Each (On a Reel of 3000) (inc. VAT)

Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 630.00
6000AED 1,260.00
9000AED 1,890.00
12000AED 2,520.00
15000AED 3,150.00
18000AED 3,780.00
21000AED 4,410.00
24000AED 5,040.00
27000AED 5,670.00
30000AED 6,300.00
33000AED 6,930.00
36000AED 7,560.00
39000AED 8,190.00
42000AED 8,820.00
45000AED 9,450.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more