Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
AED 921.38
AED 18.428 Each (In a Tube of 50) (ex VAT)
AED 967.45
AED 19.349 Each (In a Tube of 50) (inc. VAT)
50
AED 921.38
AED 18.428 Each (In a Tube of 50) (ex VAT)
AED 967.45
AED 19.349 Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


