Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

RS Stock No.: 206-9724Brand: ToshibaManufacturers Part No.: TK090A65Z,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 58.59

AED 29.295 Each (In a Pack of 2) (ex VAT)

AED 61.52

AED 30.76 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

AED 58.59

AED 29.295 Each (In a Pack of 2) (ex VAT)

AED 61.52

AED 30.76 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
2 - 8AED 29.295AED 58.59
10 - 18AED 22.785AED 45.57
20 - 24AED 22.312AED 44.62
26 - 48AED 20.528AED 41.06
50+AED 18.585AED 37.17

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more