Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
AED 53.34
AED 13.335 Each (In a Pack of 4) (ex VAT)
AED 56.01
AED 14.002 Each (In a Pack of 4) (inc. VAT)
Standard
4
AED 53.34
AED 13.335 Each (In a Pack of 4) (ex VAT)
AED 56.01
AED 14.002 Each (In a Pack of 4) (inc. VAT)
Standard
4
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
4 - 16 | AED 13.335 | AED 53.34 |
20 - 76 | AED 11.182 | AED 44.73 |
80 - 196 | AED 9.765 | AED 39.06 |
200 - 396 | AED 9.24 | AED 36.96 |
400+ | AED 9.03 | AED 36.12 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details