MOSFET Transistor Toshiba TK100A10N1,S4X(S

RS Stock No.: 827-6094PBrand: ToshibaManufacturers Part No.: TK100A10N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Stock information temporarily unavailable.

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AED 13.95

Each (Supplied in a Bag) (ex VAT)

AED 14.648

Each (Supplied in a Bag) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Select packaging type

AED 13.95

Each (Supplied in a Bag) (ex VAT)

AED 14.648

Each (Supplied in a Bag) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Bag
2 - 18AED 13.95AED 27.90
20 - 38AED 12.30AED 24.60
40 - 98AED 10.75AED 21.50
100 - 498AED 10.05AED 20.10
500+AED 9.55AED 19.10

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Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba