N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1

RS Stock No.: 796-5068Brand: ToshibaManufacturers Part No.: TK100E06N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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AED 6.50

Each (ex VAT)

AED 6.82

Each (inc. VAT)

N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 6.50
2AED 13.00
3AED 19.50
4AED 26.00
5AED 32.50
6AED 39.00
7AED 45.50
8AED 52.00
9AED 58.50
10AED 62.50
11AED 68.75
12AED 75.00
13AED 81.25
14AED 87.50
15AED 93.75

AED 6.50

Each (ex VAT)

AED 6.82

Each (inc. VAT)

N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 6.50
2AED 13.00
3AED 19.50
4AED 26.00
5AED 32.50
6AED 39.00
7AED 45.50
8AED 52.00
9AED 58.50
10AED 62.50
11AED 68.75
12AED 75.00
13AED 81.25
14AED 87.50
15AED 93.75

Buy in bulk

quantityUnit price
1 - 9AED 6.50
10 - 49AED 6.25
50 - 349AED 6.05
350 - 699AED 5.50
700+AED 5.25

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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more