Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
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AED 6.50
Each (Supplied in a Tube) (ex VAT)
AED 6.82
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
AED 6.50
Each (Supplied in a Tube) (ex VAT)
AED 6.82
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | AED 6.50 |
10 - 49 | AED 6.25 |
50 - 349 | AED 6.05 |
350 - 699 | AED 5.50 |
700+ | AED 5.25 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details