N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1

RS Stock No.: 796-5077Brand: ToshibaManufacturers Part No.: TK100E08N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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AED 13.80

Each (ex VAT)

AED 14.49

Each (inc. VAT)

N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 13.80
2AED 27.60
3AED 41.40
4AED 55.20
5AED 69.00
6AED 82.80
7AED 96.60
8AED 110.40
9AED 124.20
10AED 131.00
11AED 144.10
12AED 157.20
13AED 170.30
14AED 183.40
15AED 196.50

AED 13.80

Each (ex VAT)

AED 14.49

Each (inc. VAT)

N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 Toshiba TK100E08N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 13.80
2AED 27.60
3AED 41.40
4AED 55.20
5AED 69.00
6AED 82.80
7AED 96.60
8AED 110.40
9AED 124.20
10AED 131.00
11AED 144.10
12AED 157.20
13AED 170.30
14AED 183.40
15AED 196.50

Buy in bulk

quantityUnit price
1 - 9AED 13.80
10 - 19AED 13.10
20 - 49AED 12.45
50 - 249AED 11.00
250+AED 10.30

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more