Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
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Please check again later.
AED 13.80
Each (Supplied in a Tube) (ex VAT)
AED 14.49
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
AED 13.80
Each (Supplied in a Tube) (ex VAT)
AED 14.49
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | AED 13.80 |
10 - 19 | AED 13.10 |
20 - 49 | AED 12.45 |
50 - 249 | AED 11.00 |
250+ | AED 10.30 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details