Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

RS Stock No.: 168-7773Brand: ToshibaManufacturers Part No.: TK100E08N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 354.38

AED 7.088 Each (In a Tube of 50) (ex VAT)

AED 372.10

AED 7.442 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

50

Available in multiples of 50
50AED 354.38
100AED 708.75
150AED 1,063.12
200AED 1,417.50
250AED 1,771.88
300AED 2,126.25
350AED 2,480.62
400AED 2,835.00
450AED 3,189.38
500AED 3,543.75
550AED 3,898.12
600AED 4,252.50
650AED 4,606.88
700AED 4,961.25
750AED 5,315.62

AED 354.38

AED 7.088 Each (In a Tube of 50) (ex VAT)

AED 372.10

AED 7.442 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Stock information temporarily unavailable.

50

Available in multiples of 50
50AED 354.38
100AED 708.75
150AED 1,063.12
200AED 1,417.50
250AED 1,771.88
300AED 2,126.25
350AED 2,480.62
400AED 2,835.00
450AED 3,189.38
500AED 3,543.75
550AED 3,898.12
600AED 4,252.50
650AED 4,606.88
700AED 4,961.25
750AED 5,315.62

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more