Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

RS Stock No.: 796-5077Brand: ToshibaManufacturers Part No.: TK100E08N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 11.97

AED 11.97 Each (ex VAT)

AED 12.57

AED 12.57 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 11.97
2AED 23.94
3AED 35.91
4AED 47.88
5AED 59.85
6AED 71.82
7AED 83.79
8AED 95.76
9AED 107.73
10AED 113.40
11AED 124.74
12AED 136.08
13AED 147.42
14AED 158.76
15AED 170.10

AED 11.97

AED 11.97 Each (ex VAT)

AED 12.57

AED 12.57 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 11.97
2AED 23.94
3AED 35.91
4AED 47.88
5AED 59.85
6AED 71.82
7AED 83.79
8AED 95.76
9AED 107.73
10AED 113.40
11AED 124.74
12AED 136.08
13AED 147.42
14AED 158.76
15AED 170.10

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9AED 11.97
10 - 19AED 11.34
20 - 49AED 10.76
50 - 249AED 9.56
250+AED 8.92

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

214 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more