Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

RS Stock No.: 796-5070Brand: ToshibaManufacturers Part No.: TK100E10N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 15.12

AED 15.12 Each (ex VAT)

AED 15.88

AED 15.88 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 15.12
2AED 30.24
3AED 45.36
4AED 60.48
5AED 75.60
6AED 90.72
7AED 105.84
8AED 120.96
9AED 136.08
10AED 151.20
11AED 166.32
12AED 181.44
13AED 196.56
14AED 211.68
15AED 226.80

AED 15.12

AED 15.12 Each (ex VAT)

AED 15.88

AED 15.88 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 15.12
2AED 30.24
3AED 45.36
4AED 60.48
5AED 75.60
6AED 90.72
7AED 105.84
8AED 120.96
9AED 136.08
10AED 151.20
11AED 166.32
12AED 181.44
13AED 196.56
14AED 211.68
15AED 226.80

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 24AED 15.12
25 - 99AED 14.28
100 - 349AED 13.60
350 - 499AED 12.13
500+AED 11.50

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more