N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

RS Stock No.: 125-0532Brand: ToshibaManufacturers Part No.: TK10A60W,S4VX(M
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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AED 4.85

Each (In a Pack of 5) (ex VAT)

AED 5.092

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

5

Available in multiples of 5
5AED 24.25
10AED 48.50
15AED 72.75
20AED 97.00
25AED 78.75
30AED 94.50
35AED 110.25
40AED 126.00
45AED 141.75
50AED 155.00
55AED 170.50
60AED 186.00
65AED 201.50
70AED 217.00
75AED 232.50

AED 4.85

Each (In a Pack of 5) (ex VAT)

AED 5.092

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Stock information temporarily unavailable.

5

Available in multiples of 5
5AED 24.25
10AED 48.50
15AED 72.75
20AED 97.00
25AED 78.75
30AED 94.50
35AED 110.25
40AED 126.00
45AED 141.75
50AED 155.00
55AED 170.50
60AED 186.00
65AED 201.50
70AED 217.00
75AED 232.50

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 4.85AED 24.25
25 - 45AED 3.15AED 15.75
50 - 120AED 3.10AED 15.50
125 - 245AED 3.10AED 15.50
250+AED 3.05AED 15.25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more