Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
AED 54.33
AED 10.866 Each (In a Pack of 5) (ex VAT)
AED 57.05
AED 11.409 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 54.33
AED 10.866 Each (In a Pack of 5) (ex VAT)
AED 57.05
AED 11.409 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 10.866 | AED 54.33 |
25 - 45 | AED 8.755 | AED 43.78 |
50 - 120 | AED 7.982 | AED 39.91 |
125 - 245 | AED 7.313 | AED 36.56 |
250+ | AED 6.54 | AED 32.70 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details