Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.8mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
19mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.8mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
19mm
Country of Origin
Japan
Product details