N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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AED 11.50
AED 2.30 Each (In a Pack of 5) (ex VAT)
AED 12.08
AED 2.415 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 11.50
AED 2.30 Each (In a Pack of 5) (ex VAT)
AED 12.08
AED 2.415 Each (In a Pack of 5) (inc. VAT)
Standard
5
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products