Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

RS Stock No.: 125-0541Brand: ToshibaManufacturers Part No.: TK16E60W5,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 29.92

AED 5.985 Each (In a Pack of 5) (ex VAT)

AED 31.42

AED 6.284 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

5

Available in multiples of 5
5AED 29.92
10AED 59.85
15AED 89.78
20AED 119.70
25AED 90.56
30AED 108.68
35AED 126.79
40AED 144.90
45AED 163.01
50AED 165.38
55AED 181.91
60AED 198.45
65AED 214.99
70AED 231.52
75AED 248.06

AED 29.92

AED 5.985 Each (In a Pack of 5) (ex VAT)

AED 31.42

AED 6.284 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5AED 29.92
10AED 59.85
15AED 89.78
20AED 119.70
25AED 90.56
30AED 108.68
35AED 126.79
40AED 144.90
45AED 163.01
50AED 165.38
55AED 181.91
60AED 198.45
65AED 214.99
70AED 231.52
75AED 248.06

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20AED 5.985AED 29.92
25 - 45AED 3.622AED 18.11
50 - 120AED 3.308AED 16.54
125+AED 3.308AED 16.54

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more