N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W,S1VX(S

RS Stock No.: 827-6148PBrand: ToshibaManufacturers Part No.: TK16E60W,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Series

TK

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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AED 7.85

Each (Supplied in a Bag) (ex VAT)

AED 8.242

Each (Supplied in a Bag) (inc. VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W,S1VX(S
Select packaging type

Production pack (Bag)

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4AED 31.40
8AED 62.80
12AED 94.20
16AED 125.60
20AED 157.00
24AED 188.40
28AED 219.80
32AED 251.20
36AED 282.60
40AED 314.00
44AED 345.40
48AED 376.80
52AED 408.20
56AED 439.60
60AED 471.00

AED 7.85

Each (Supplied in a Bag) (ex VAT)

AED 8.242

Each (Supplied in a Bag) (inc. VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W,S1VX(S
Stock information temporarily unavailable.
Select packaging type

Production pack (Bag)

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4AED 31.40
8AED 62.80
12AED 94.20
16AED 125.60
20AED 157.00
24AED 188.40
28AED 219.80
32AED 251.20
36AED 282.60
40AED 314.00
44AED 345.40
48AED 376.80
52AED 408.20
56AED 439.60
60AED 471.00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.45mm

Transistor Material

Si

Series

TK

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more