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Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

RS Stock No.: 144-5200Brand: ToshibaManufacturers Part No.: TK20A25D,S5X(J
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 29.92

AED 2.992 Each (In a Pack of 10) (ex VAT)

AED 31.42

AED 3.142 Each (In a Pack of 10) (inc. VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

10

Available in multiples of 10
10AED 29.92
20AED 59.85
30AED 85.05
40AED 113.40
50AED 141.75
60AED 170.10
70AED 198.45
80AED 226.80
90AED 255.15
100AED 283.50
110AED 311.85
120AED 340.20
130AED 368.55
140AED 396.90
150AED 425.25

AED 29.92

AED 2.992 Each (In a Pack of 10) (ex VAT)

AED 31.42

AED 3.142 Each (In a Pack of 10) (inc. VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J
Stock information temporarily unavailable.

10

Available in multiples of 10
10AED 29.92
20AED 59.85
30AED 85.05
40AED 113.40
50AED 141.75
60AED 170.10
70AED 198.45
80AED 226.80
90AED 255.15
100AED 283.50
110AED 311.85
120AED 340.20
130AED 368.55
140AED 396.90
150AED 425.25

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20AED 2.992AED 29.92
30+AED 2.835AED 28.35

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more