Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.5mm
Height
15mm
Country of Origin
Malaysia
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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AED 17.35
Each (Supplied in a Tube) (ex VAT)
AED 18.218
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
3
AED 17.35
Each (Supplied in a Tube) (ex VAT)
AED 18.218
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
3
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.5mm
Height
15mm
Country of Origin
Malaysia
Product details