Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.02mm
Length
15.94mm
Forward Diode Voltage
1.7V
Height
20.95mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
AED 68.78
AED 13.755 Each (In a Pack of 5) (ex VAT)
AED 72.22
AED 14.443 Each (In a Pack of 5) (inc. VAT)
5
AED 68.78
AED 13.755 Each (In a Pack of 5) (ex VAT)
AED 72.22
AED 14.443 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 13.755 | AED 68.78 |
| 25 - 45 | AED 12.442 | AED 62.21 |
| 50+ | AED 11.34 | AED 56.70 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
55 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.02mm
Length
15.94mm
Forward Diode Voltage
1.7V
Height
20.95mm
Country of Origin
Japan
Product details


