Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.5mm
Transistor Material
Si
Series
TK
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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AED 1.10
Each (In a Pack of 6) (ex VAT)
AED 1.155
Each (In a Pack of 6) (inc. VAT)
Standard
6
AED 1.10
Each (In a Pack of 6) (ex VAT)
AED 1.155
Each (In a Pack of 6) (inc. VAT)
Standard
6
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.5mm
Transistor Material
Si
Series
TK
Height
15mm
Country of Origin
China
Product details