Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S

RS Stock No.: 827-6179Brand: ToshibaManufacturers Part No.: TK30A06N1,S4X(S
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

AED 39.90

AED 3.99 Each (In a Pack of 10) (ex VAT)

AED 41.90

AED 4.19 Each (In a Pack of 10) (inc. VAT)

Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S
Select packaging type

AED 39.90

AED 3.99 Each (In a Pack of 10) (ex VAT)

AED 41.90

AED 4.19 Each (In a Pack of 10) (inc. VAT)

Toshiba TK N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS TK30A06N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 90AED 3.99AED 39.90
100 - 190AED 3.308AED 33.08
200 - 360AED 2.94AED 29.40
370 - 740AED 2.888AED 28.88
750+AED 2.835AED 28.35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more