Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
AED 39.90
AED 3.99 Each (In a Pack of 10) (ex VAT)
AED 41.90
AED 4.19 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 39.90
AED 3.99 Each (In a Pack of 10) (ex VAT)
AED 41.90
AED 4.19 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 3.99 | AED 39.90 |
| 100 - 190 | AED 3.308 | AED 33.08 |
| 200 - 360 | AED 2.94 | AED 29.40 |
| 370 - 740 | AED 2.888 | AED 28.88 |
| 750+ | AED 2.835 | AED 28.35 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Country of Origin
China
Product details


