Toshiba TK N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
AED 139.12
AED 2.782 Each (In a Tube of 50) (ex VAT)
AED 146.08
AED 2.921 Each (In a Tube of 50) (inc. VAT)
50
AED 139.12
AED 2.782 Each (In a Tube of 50) (ex VAT)
AED 146.08
AED 2.921 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | AED 2.782 | AED 139.12 |
| 250 - 450 | AED 2.572 | AED 128.62 |
| 500 - 1200 | AED 2.415 | AED 120.75 |
| 1250 - 2450 | AED 2.31 | AED 115.50 |
| 2500+ | AED 2.31 | AED 115.50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products