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N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(S

RS Stock No.: 125-0562Brand: ToshibaManufacturers Part No.: TK30E06N1,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

53 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
AED 4.41Each (In a Pack of 5) (ex VAT)

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AED 2.10

Each (In a Pack of 10) (ex VAT)

AED 2.205

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(S

AED 2.10

Each (In a Pack of 10) (ex VAT)

AED 2.205

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(S
Stock information temporarily unavailable.

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quantityUnit pricePer Pack
10 - 40AED 2.10AED 21.00
50 - 90AED 1.30AED 13.00
100 - 240AED 1.20AED 12.00
250 - 490AED 1.20AED 12.00
500+AED 1.20AED 12.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in
N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
AED 4.41Each (In a Pack of 5) (ex VAT)

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

53 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
AED 4.41Each (In a Pack of 5) (ex VAT)