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Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

RS Stock No.: 168-7968Brand: ToshibaManufacturers Part No.: TK31E60W,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 811.12

AED 16.222 Each (In a Tube of 50) (ex VAT)

AED 851.68

AED 17.033 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

50

Available in multiples of 50
50AED 811.12
100AED 1,622.25
150AED 2,433.38
200AED 3,244.50
250AED 3,648.75
300AED 4,378.50
350AED 5,108.25
400AED 5,838.00
450AED 6,567.75
500AED 6,667.50
550AED 7,334.25
600AED 8,001.00
650AED 8,667.75
700AED 9,334.50
750AED 10,001.25

AED 811.12

AED 16.222 Each (In a Tube of 50) (ex VAT)

AED 851.68

AED 17.033 Each (In a Tube of 50) (inc. VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S
Stock information temporarily unavailable.

50

Available in multiples of 50
50AED 811.12
100AED 1,622.25
150AED 2,433.38
200AED 3,244.50
250AED 3,648.75
300AED 4,378.50
350AED 5,108.25
400AED 5,838.00
450AED 6,567.75
500AED 6,667.50
550AED 7,334.25
600AED 8,001.00
650AED 8,667.75
700AED 9,334.50
750AED 10,001.25

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 200AED 16.222AED 811.12
250 - 450AED 14.595AED 729.75
500+AED 13.335AED 666.75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Number of Elements per Chip

1

Width

4.45mm

Height

15.1mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more