Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
AED 194.25
AED 3.885 Each (In a Tube of 50) (ex VAT)
AED 203.96
AED 4.079 Each (In a Tube of 50) (inc. VAT)
50
AED 194.25
AED 3.885 Each (In a Tube of 50) (ex VAT)
AED 203.96
AED 4.079 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | AED 3.885 | AED 194.25 |
| 250 - 950 | AED 3.308 | AED 165.38 |
| 1000 - 2450 | AED 3.255 | AED 162.75 |
| 2500+ | AED 3.15 | AED 157.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details


